NPN, BJT 121-755 Transistor

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Type of Transistor: BJT Type Designator: 121-755 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation: 2 W Maximum Collector-Base Voltage: 300 V Maximum Col lector-Emitter Voltage: 300 V Maximum Emitter-Base Voltage: 6 V Maximum Collector Current: 0.5 A Maximum Operating Junction Temperature: 150 °C Transition Frequency: 45 MHz Forward Current Transfer Ratio (hFE Value): 40 Show more