130 pp. CONTENTS: Preface; PREPARATION OF P-I-N JUNCTIONS: Introduction; Dislocation density; Hall effect; Resistivity; Infrared absorption; p-n Junction characteristics: Sheet resistance; p-n Junction capacity; Lithium drift; Lithium-impurity reactions: Pure crystals; Cyrstals containing much oxygen; Crystals containing some oxygen; Crystals containing much boron; Preparation method: Contact to the p-type region; The n-type layer; The lithium drift process; PARTICLE IDENTIFICATION BY PULSE-SHAPE DISCRIMINATION: Introduction; Pulse shape analysis; Particle identification method; Experimental arrangement: Beam arrangement; Detector properties; Electronic equipment; Results: Experimental results; Calculated results; Discussion: Temperature of the detector; Comparison of experimental and calculated results; Particle identification capabilities; Thicker detector; Radiation on the n-side; Pulse shaping by RC-networks; Two detector method; IRRADIATION DAMAGE IN LITHIUM DOPED SILICON: Introduction; Irradiations: Gamma irradiation; Electron irradiation; Gamma irradation damage in lithium drifted p-i-n junctions: Junction capacity measurements; Irradiation effect on junction capacity; Time dependence of defect concentration; Potential probe measurements; Particle detection by irradiated junctions; Gamma irradiation damage in isolated lithium drifted silicon: Method of measurement; Time dependence of conductivity; Temperature dependence of hole concentration; Electron irradiation damage in heavily lithium doped silicon: Sample preparation; Resistivity and Hall effect; Electron spin resonance; Discussion of the results: Time constant TLiR; Time Constant TC; Recovery behaviour of irradiation effect; Defect level at 0.23 eV; Defect R; Application to lithium drifted junction detectors; APPENDIX: Treatment of p-n junction with complementary error function impurity distribution: A.1: p-n Junction capacity; A.2: Lithium drift; Summary; Samenvatting; References; Slotwoord -- Acknowledgments.
