HEP803

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HEP803: Silicon N-Channel Dual-Gate Insulated-Gate Field-Effect Transistor (IGFET/MOSFET), featuring integrated internal back-to-back Zener diode networks on both gates to provide robust electrostatic discharge (ESD) shielding protection. It handles high-gain, low-cross-modulation VHF amplifier tracks inside high-performance tuner sub-assemblies, housed in a standard 4-lead through-hole hermetic metal can package footprint layout. Exact Industry Equals: HEP803 | NTE 221. Show more