The KM416S1120DT-G10 is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.Features:3.3V power supplyLVTTL compatible with multiplexed addressDual banks operationMRS cycle with address key programsAll inputs are sampled at the positive going edge of the system clockBurst Read Single-bit Write operationDQM for maskingAuto & self refresh15.6us refresh duty cycle (2K/32ms)TSOP 50 package. Manufactured by Samsung. Additional Resources Adobe PDF - Information
