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FP25R12KE3, Trench IGBT and Emitter Controlled 3 Diode, 25 Amp, 1200V, Press Fit 45mm base width
AUD 139.00
Fastron Electronics Store
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Infineon FP25R12KE3, Trench IGBT and Emitter Controlled 3 Diode, 25 Amp, 1200V, Press Fit 45mm base width Features IGBT for Rectifier Pressure Contact Technology Electrically insul
ated base plate Press Mounted Style 2500V Isolation 61mm Base Width Applications Frequency Converter Line rectifying 50/60 Hz Deep Cycle Applications Controlled Rectifiers Inverter Drives Specification Infineon Part Number FP25R12KE3 Vces 1200V Transistor Configuration H Bridge IGBT Module & Emitter Controlled Diodes x 3 Ic(nom) @ 80 Deg C 150 Amp Package Size W:162mm L:150mm D:20mm V(isol) 2.5 kV Vf @ 25 Deg C 1.65 - 2.15V Tj(max) 150°C Td(on) @ 25 Deg C 0.25uS Td(off) @ 25 Deg C 0.55uS I(ces) @ 25 Deg C 5mA Rcc 1.1mOhm Terminals Press Fit Gate Terminals Pin Weight 180g Mounting Torque 5 Nm (4 Nm Terminals) Factory Pack Qty 10 Certification UL Listed, ROHS Infineon Headquarters Germany Datasheet Product Datasheet Alternatives No Alternative
