カテゴリ: 論文誌(論文単位)グループ名: 【A】基礎・材料・共通部門発行日: 2014/06/01タイトル(英語): Development of a Compact Switching Power Supply for an Induction Synchrotron Utilizing a SiC-JFET著者名: 岡村 勝也（高エネルギー加速器研究機構），伊勢 慶一（岩手大学工学部），水島 俊也（岩手大学工学部），佐々木 遼介（岩手大学工学部），高木 浩一（岩手大学工学部），田村 文裕（長岡技術科学大学原子力安全系），由元 崇（東京工業大学），大沢 裕（新電元工業），高山 健（高エネルギー加速器研究機構／東京工業大学）著者名(英語): Katsuya Okamura (High Energy Accelerator Research Organization), Keiichi Ise (Faculty of Engineering, Iwate University), Toshiya Mizushima (Faculty of Engineering, Iwate University), Ryouske Sasaki (Faculty of Engineering, Iwate University), Kouichi Takaki (Faculty of Engineering, Iwate University), Fumihiro Tamura (Nuclear System Safety Engineering, Nagaoka University of Technology), Takashi Yoshimoto (Tokyo Institute of Technology), Yutaka Osawa (Shindengen Electric Manufacturing Co., Ltd.), Ken Takayama (High Energy Accelerator Research Organization/Tokyo Institute of Technology)キーワード: シリコンカーバイド，高速スイッチング，誘導加速，デジタル加速器，パルス電源 SiC-JFET，high-speed switching，induction accelerator，digital accelerator，pulsed power要約(英語): Utilizing a high power discrete SiC-JFET developed by KEK, a switching power supply (SPS) that had a circuit topology of H-bridge was designed and constructed to drive the induction acceleration system for the KEK digital accelerator. Firstly, the SPS was operated with a 38Ω dummy resistance load and bipolar outputs of 800V and 21A were successfully demonstrated at 1MHz. Nextly, combination test with an actual induction cell was demonstrated. And finally, actual beam acceleration test was successfully demonstrated.本誌: 電気学会論文誌A（基礎・材料・共通部門誌） Vol.134 No.6 （2014）本誌掲載ページ: 402-409 p原稿種別: 論文／日本語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejfms/134/6/134_402/_article/-char/ja/
