カテゴリ: 論文誌(論文単位)グループ名: 【A】基礎・材料・共通部門発行日: 2024/12/01タイトル(英語): Development of Inductive Energy Storage Pulsed Power Generator using GaN Power Semiconductor Switches著者名: 大根田 裕樹（小山工業高等専門学校），藤見 もも（小山工業高等専門学校），長尾 和樹（小山工業高等専門学校），須貝 太一（長岡技術科学大学），徳地 明（長岡技術科学大学／（株）パルスパワー技術研究所），江 偉華（長岡技術科学大学）著者名(英語): Yuki Oneda (National Institute of Technology, Oyama College), Momo Fujimi (National Institute of Technology, Oyama College), Kazuki Nagao (National Institute of Technology, Oyama College), Taichi Sugai (Nagaoka University of Technology), Akira Tokuchi (Nagaoka University of Technology/Pulsed Power Japan Laboratory Ltd.), Weihua Jiang (Nagaoka University of Technology)キーワード: パルスパワー，半導体スイッチ，窒化ガリウム，誘導性エネルギー蓄積，高速電流遮断 pulsed power，semiconductor switches，Gallium Nitride，inductive energy storage，fast current interruption要約(英語): Characterizations of pulsed power output for pulsed power generator using GaN FET have been evaluated and compared with using SiC-MOS FET. The fast rise/fall time of output voltage without the dependance on the dummy load has attractive feathers. However, the surge voltage between drain and source terminals, exceeding the maximum rating occurred due to the fast turn-off speed feathers of GaN FET, which has limited the power capability. The inductive energy storage pulsed power generator using GaN FETs as opening switches has developed, and the output obtains a maximum voltage of ～900V with rise/fall time of
