カテゴリ: 論文誌(論文単位)グループ名: 【C】電子・情報・システム部門発行日: 2013/05/01タイトル(英語): Development of 1200V Level Shifter Devices on SOI for HVIC著者名: 白木 聡（(株) デンソー,パワトレイン機器事業グループ電気先行開発室），山田 明（(株) デンソー,半導体プロセス開発部）著者名(英語): Satoshi Shiraki (Advanced Electric Technology R&D Dept., Powertrain Control Systems Business Group, DENSO CORP.), Akira Yamada (Semiconductor Process R&D Dept., DENSO CORP.)キーワード: SOI，HVIC，レベルシフト素子，高耐圧，カスケード，dV/dt SOI，HVIC，level shifter，high voltage，cascade，dV/dt要約(英語): We have developed monolithic SOI type 1200V level shifters for inverter driver ICs, which are based on a new design concept of cascaded 120V LDMOSFETs. In order to clarify the problem of blocking voltage lowering against a high dV/dt surge, we have analyzed transient behavior of monolithically cascaded LDMOSFETs by numerical simulations and experiments. As a result, we have established a new design concept including device layouts and circuits, which minimizes breakdown voltage lowering at very high dV/dt of 20kV/μs. This concept is expected to be a key technology enabling 1200V SOI inverter driver ICs for harsh applications such as automotive electronics.本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.133 No.5 （2013） 特集：新たな産業への応用が進む無線通信技術本誌掲載ページ: 930-936 p原稿種別: 論文／日本語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/133/5/133_930/_article/-char/ja/
