カテゴリ: 論文誌(論文単位)グループ名: 【C】電子・情報・システム部門発行日: 2014/04/01タイトル(英語): How Can We Monitor the Recovery of a Damaged Crystal by the Post Annealing?著者名: Sachiko T. Nakagawa (Graduate School of Science, Okayama University of Science), Tomoaki Murakami (Graduate School of Science, Okayama University of Science), Masakatsu Nomura (Graduate School of Science, Okayama University of Science), Hisao Kanda (Natio著者名(英語): Sachiko T. Nakagawa (Graduate School of Science, Okayama University of Science), Tomoaki Murakami (Graduate School of Science, Okayama University of Science), Masakatsu Nomura (Graduate School of Science, Okayama University of Science), Hisao Kanda (National Institute for Materials Science), Eiichi Sukedai (Graduate School of Science, Okayama University of Science), Harry J. Whitlow (Institut des Microtechnologies Appliquees Arc, Haute-Ecole Arc Ingenierie)キーワード: beam science,local phonon-assisted process,computer simulation,statistical modelling要約(英語): In order to produce an effective semiconductor device an implanted dopant should be located on a crystalline lattice site, which requires a so-called post annealing (PA) step. The period of the PA takes a few milliseconds at the minimum, which is far beyond the time-limit of an empirical molecular dynamics (MD) simulation discussed here. Nevertheless, faint changes in the initial stage of the PA govern the following events. What happens after PA starts as time develops has been investigated in the frame work of the MD simulation in terms of the long-range-order (LRO) parameter. The LRO did not recover continuously as was expected, but instead exhibited spikes at almost regular time-intervals. This profile revealed that the restoration of crystallinity undergoes synergistically and oscillatory, i.e., local phonons emerge sporadically prior to the final stage of PA.本誌: 電気学会論文誌C(電子・情報・システム部門誌) Vol.134 No.4 (2014) 特集:量子ビームによるナノバイオ物理応用技術本誌掲載ページ: 479-483 p原稿種別: 論文/英語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/134/4/134_479/_article/-char/ja/