カテゴリ: 論文誌(論文単位)グループ名: 【C】電子・情報・システム部門発行日: 2016/12/01タイトル(英語): Characterization of p-ZnTe/n-ZnO Heterojunction Interface Prepared by Direct Bonding Technology著者名: 秋山 肇（佐賀大学大学院工学系研究科），内海 淳（三菱重工工作機械（株）），田中 徹（佐賀大学大学院工学系研究科），齊藤 勝彦（佐賀大学大学院工学系研究科），西尾 光弘（佐賀大学大学院工学系研究科），郭 其新（佐賀大学大学院工学系研究科）著者名(英語): Hajime Akiyama (Graduate School of Science and Engineering, Saga University), Jun Utsumi (Mitsubishi Heavy Industries Machine Tool Co., Ltd), Tooru Tanaka (Graduate School of Science and Engineering, Saga University), Katsuhiko Saito (Graduate School of Science and Engineering, Saga University), Mitsuhiro Nishio (Graduate School of Science and Engineering, Saga University), Qixin Guo (Graduate School of Science and Engineering, Saga University)キーワード: 直接接合法，活性表面，アルゴンビーム衝撃，ヘテロ接合，ZnTe，ZnO Direct bonding technology，surface activation，argon-ion bombardment，Hetero junction，ZnTe，ZnO要約(英語): We fabricated a p-ZnTe/n-ZnO heterojunction structure by a direct bonding technology. The surfaces of the p-ZnTe and n-ZnO substrates were activated by low-energy argon-ion bombardment under high vacuum, with keeping their roughness. Continuously, they brought into contact under controlled pressure at room temperature, and annealed in argon atmosphere as post process. Atomic-scale bonding was confirmed by transmission electron microscopy and scanning energy-dispersive X-ray spectroscopy. It was also confirmed that the electric rectifying characteristics depend on the bonding press time and the post anneal temperature.本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.136 No.12 （2016） 特集Ⅰ：電気・電子・情報関係学会東海支部連合大会 特集Ⅱ：国際会議ACIS 2014/2015本誌掲載ページ: 1761-1766 p原稿種別: 論文／日本語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/136/12/136_1761/_article/-char/ja/
