カテゴリ: 論文誌(論文単位)グループ名: 【C】電子・情報・システム部門発行日: 2023/12/01タイトル(英語): Study on Transfer Characteristics of MOSFET Operating in Weak Inversion Region著者名: 西山 直哉（東洋大学大学院 理工学研究科 電気電子情報専攻），松井 文也（東洋大学大学院 理工学研究科 電気電子情報専攻），佐野 勇司（東洋大学大学院 理工学研究科 電気電子情報専攻）著者名(英語): Naoya Nishiyama (Graduate School of Science and Engineering, Course of Electricity, Electronics and Communications, Toyo University), Fumiya Matsui (Graduate School of Science and Engineering, Course of Electricity, Electronics and Communications, Toyo University), Yuji Sano (Graduate School of Science and Engineering, Course of Electricity, Electronics and Communications, Toyo University)キーワード: 弱反転，MOSFET，信号変換回路，べき乗関数，サブスレッショルドスウィング値 subthreshold，MOSFET，signal conversion circuit，exponentiation function，subthreshold swing要約(英語): In order to compensate non-linearity of any electronic devices, we have proposed small scale exponentiation conversion circuit by utilizing subthreshold operation of the MOSFET up to now. The exponentiation conversion circuit multiplies the logarithmically converted input signal by the power exponent value to perform exponential conversion. The power supply voltage of the power conversion IC has been reduced to 3.3V, however, the characteristics of the MOSFETs have changed with the lower voltage. Also, since the performance of the exponentiation conversion IC is determined by the exponential and logarithmic conversion accuracy of the signal in subthreshold operation, the current density and bias conditions of the MOSFET must be carefully designed. In this paper, we report the details of the MOSFETs’ optimum operating conditions, which were established by detailed analysis of the signal dynamic range, subthreshold leak current and subthreshold swing in the subthreshold region of the MOSFETs when the source voltage, supply voltage and Temperature are varied.本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.143 No.12 （2023） 特集：電気・電子・情報関係学会東海支部連合大会本誌掲載ページ: 1154-1162 p原稿種別: 論文／日本語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/143/12/143_1154/_article/-char/ja/
