カテゴリ: 論文誌(論文単位)グループ名: 【C】電子・情報・システム部門発行日: 2024/03/01タイトル(英語): Development and Recent Progress on Diamond Semiconductor Devices著者名: 牧野 俊晴（産業技術総合研究所）著者名(英語): Toshiharu Makino (National Institute of Advanced Industrial Science and Technology (AIST))キーワード: ダイヤモンド，ホッピング伝導，ショットキーpnダイオード，MOSFET diamond，hopping conduction，Schottky-pn diode，MOSFET要約(英語): Diamond has excellent physical properties as high breakdown electric field, high thermal conductivity, and high bulk carrier mobility. From these points of view, diamond is expected as an appropriate material which can be applied to next-generation high-power devices. However, the impurity levels of p- and n-type diamond are very deep. Therefore, carrier concentration generated by impurities is very low at room temperature. In order to overcome this issue, heavily impurity-doped layers, which shows hopping-conduction, can be applied in diamond devices. In this paper, Schottky-pn diode with extremely high forward current density is introduced as a typical diamond diode using hopping conduction layers. The recent progresses of diamond switching devices, such as MOSFET, are also introduced.本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.144 No.3 （2024） 特集Ⅰ：スマートシステムと計測・制御技術 特集Ⅱ：シリコンならびにワイドバンドギャップパワー半導体の最新技術本誌掲載ページ: 193-197 p原稿種別: 解説論文／日本語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/144/3/144_193/_article/-char/ja/
