Low-Voltage PV Power Integration into Medium Voltage Grid Using High-Voltage SiC Devices

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カテゴリ: 論文誌(論文単位)グループ名: 【D】産業応用部門（英文）発行日: 2015/11/01タイトル(英語): Low-Voltage PV Power Integration into Medium Voltage Grid Using High-Voltage SiC Devices著者名: Ritwik Chattopadhyay (FREED M Systems Centre, North Carolina State University, Dept. of ECE Raleigh), Subhashish Bhattacharya (FREEDM Systems Centre, North Carolina State University, Dept. of ECE Raleigh), Nicole C. Foureaux (TESLA Power Engineering, Unive著者名(英語): Ritwik Chattopadhyay (FREEDM Systems Centre, North Carolina State University, Dept. of ECE Raleigh), Subhashish Bhattacharya (FREEDM Systems Centre, North Carolina State University, Dept. of ECE Raleigh), Nicole C. Foureaux (TESLA Power Engineering, Universidade Federal de Minas Gerais), Igor A. Pires (TESLA Power Engineering, Universidade Federal de Minas Gerais), Helder de Paula (TESLA Power Engineering, Universidade Federal de Minas Gerais), Lenin Moraes (TESLA Power Engineering, Universidade Federal de Minas Gerais), Porfirio C. Cortizio (TESLA Power Engineering, Universidade Federal de Minas Gerais), Sidelmo M. Silva (TESLA Power Engineering, Universidade Federal de Minas Gerais), Braz Cardoso Filho (TESLA Power Engineering, Universidade Federal de Minas Gerais), Jose A. de S. Brito (COELBA)キーワード: medium voltage grid，PV plant，renewable energy source，SiC. dual active bridge (DAB)要約(英語): High voltage high power semiconductor devices are being used for grid integration of renewable energy sources. 1200V/100A SiC-MOSFETs, 1700V SiC-MOSFETs, 1700V SiC-Schottky diodes, 10kV SiC-MOSFETs, and 10kV JBS diodes have proved to be useful for high-voltage applications. High-voltage SiC devices enable high-switching frequency operation thus reducing the size of the parasitic element. This paper focuses on an alternative approach to the 0.9MW PV power plant currently being constructed in Brazil. The objective of the use of high power SiC devices for integration of the PV power plant into 13.8kV grid is to provide higher efficiency and reduced size and volume.本誌: IEEJ Journal of Industry Applications Vol.4 No.6 （2015）本誌掲載ページ: 767-775 p原稿種別: 論文／英語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/4/6/4_767/_article/-char/ja/ Show more