Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost

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カテゴリ: 論文誌(論文単位)グループ名: 【D】産業応用部門（英文）発行日: 2018/05/01タイトル(英語): Comprehensive Study on Gate Driver for SiC-MOSFETs with Gate Boost著者名: Koji Yamaguchi (Department Electrical System, Pro duct Development Center, IHI Corporation), Kenshiro Katsura (Department Electrical System, Product Development Center, IHI Corporation), Tatsuro Yamada (Department Electrical System, Product Development Cen著者名(英語): Koji Yamaguchi (Department Electrical System, Product Development Center, IHI Corporation), Kenshiro Katsura (Department Electrical System, Product Development Center, IHI Corporation), Tatsuro Yamada (Department Electrical System, Product Development Cenキーワード: gate drive，EMI，inverter，SiC，MOSFET，switching loss，switching noise要約(英語): This paper presents a high-speed, low loss, and low noise gate driver for silicon-carbide (SiC) MOSFETs. We propose a gate boost circuit to reduce the switching loss and delay time without increasing the switching noise. The proposed gate driver enables converter-level efficiency improvements or power density enhancements. SiC MOSFETs have attracted significant interest as the next generation power devices. In general, the switching performance of power devices exhibits a trade-off between switching loss and noise. SiC-MOSFETs are expected to switch faster than Silicon IGBTs; however, faster switching might cause switching noise problems such as unwanted electromagnetic interferences (EMI). In this paper, we propose a gate driver topology that improves the switching performance of SiC-MOSFETs, and confirm the reduction in switching loss and delay time through experimental results.本誌: IEEJ Journal of Industry Applications Vol.7 No.3 （2018） Special Issue on “SPC-Power Electronics and Its Applications”本誌掲載ページ: 218-228 p原稿種別: 論文／英語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/7/3/7_218/_article/-char/ja/ Show more