Application of Frequency-Domain Noise-Source Model to Simulation of Time-Synchronized Near-Magnetic-Field Distribution above a Power Circuit

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カテゴリ: 論文誌(論文単位)グループ名: 【D】産業応用部門（英文）発行日: 2024/01/01タイトル(英語): Application of Frequency-Domain Noise-Source Model to Simulation of Time-Synchronized Near-Magnetic-Field Distribution a bove a Power Circuit著者名: Keita Takahashi (Advanced Technology R&D Center, Mitsubishi Electric Corporation/Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University), Takaaki Ibuchi (Division of Electrical, Electronic a著者名(英語): Keita Takahashi (Advanced Technology R&D Center, Mitsubishi Electric Corporation/Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University), Takaaki Ibuchi (Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University), Tsuyoshi Funaki (Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University)キーワード: power electronics，electromagnetic interference (EMI) noise，near-magnetic-field distribution要約(英語): The high-electromagnetic-interference (EMI)-noise area in a power circuit should be clarified when designing a low-EMI-noise power converter. For example, shielding of the power circuit prevents the EMI noise propagation to other circuits via near field couplings. It is important to know the high-EMI-noise area which should be shielded. The EMI noise distribution can be visualized by measuring the near-magnetic-field distribution above the power circuit. However, we cannot measure the near-magnetic-field distribution if there is not enough space for scanning a magnetic field probe between the power circuit and other circuits. Therefore, we propose to adopt a three-dimensional electromagnetic simulation for acquiring the near-magnetic-field distribution above a power circuit. In this paper, we study the validity of the frequency-domain noise-source model for the simulation of the near-magnetic field distribution. We evaluate the near-magnetic-field distribution maps for turn-on and turn-off of the transistor, respectively. The high-EMI-noise area differs depending on frequencies. The high-EMI-noise area for turn-on is different from that for turn-off. We have clarified that each high-EMI-noise area can be predicted by the simulation.本誌: IEEJ Journal of Industry Applications Vol.13 No.1 （2024）本誌掲載ページ: 70-80 p原稿種別: 論文／英語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/13/1/13_23005684/_article/-char/ja/ Show more