カテゴリ: 論文誌(論文単位)グループ名: 【D】産業応用部門（英文）発行日: 2024/07/01タイトル(英語): Technical Trends of SiC Power Semiconductor Devices and Their Applications in Power Electronics著者名: Naoto Fujishima (Fuji Electric Co., Ltd.)著者名(英語): Naoto Fujishima (Fuji Electric Co., Ltd.)キーワード: power device，MOSFET，power electronics，renewable energy，electrified vehicle要約(英語): Power electronics technologies play important roles in energy conservation and low-carbon goals, whereby power devices, such as silicon IGBTs and SiC-MOSFETs, are key components that support the efficient use of energy by power electronics and are indispensable for power supply and control. This paper provides an overview of market trends for power semiconductor devices, and introduces and focuses on state-of-the-art SiC power devices, such as SiC-MOSFET and SiC-SBD. This paper also reports on the requirements and applications of power electronics equipment that utilizes SiC power devices.本誌: IEEJ Journal of Industry Applications Vol.13 No.4 （2024） Special Issue on “JIASC 2023”本誌掲載ページ: 372-378 p原稿種別: 論文／英語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/13/4/13_23005497/_article/-char/ja/
