Evaluation of Electrical Model Parameter Changes in SiC Power MOSFETs During Power Cycling Test

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カテゴリ: 論文誌(論文単位)グループ名: 【D】産業応用部門（英文）発行日: 2024/11/01タイトル(英語): Evaluation of Electrical Model Parameter Changes in SiC Power MOSFETs During Power Cycling Test著者名: Shuhei Fukunaga (Div ision of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University), Yuki Nakamura (Division of Electronic and Information Engineering, Osaka University), Tsuyoshi Funaki (Division of E著者名(英語): Shuhei Fukunaga (Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University), Yuki Nakamura (Division of Electronic and Information Engineering, Osaka University), Tsuyoshi Funaki (Division of Electrical, Electronic and Infocommunications Engineering, Graduate School of Engineering, Osaka University)キーワード: SiC MOSFET，power module，reliability，power cycling test，gate threshold voltage instability要約(英語): Silicon carbide (SiC) power modules have witnessed significant advancements in recent years, and adopted in a wide range of power electronics applications. The long-term reliability of SiC power modules is key for the replacement of conventional Si power modules. Although several reliability test methods for SiC power modules have been conducted, SiC MOSFETs still have concerns regarding changes in electrical characteristics owing to electrical or thermal stresses. It can cause errors in junction temperature estimation, especially in the power cycling test, which utilizes the electrical characteristics of MOSFETs to detect mechanical deterioration of power module packages. In order to accurately assess the long-term reliability of power module packages, it is necessary to clarify a suitable test method to avoid any electrical degradations of SiC MOSFETs. This paper experimentally investigates the changes in electrical model parameters of several SiC MOSFETs in power cycling tests. The investigation focuses on the influences of the self-heating method on large forward and reverse current flows through the SiC MOSFET.本誌: IEEJ Journal of Industry Applications Vol.13 No.6 （2024）本誌掲載ページ: 731-740 p原稿種別: 論文／英語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/13/6/13_24004453/_article/-char/ja/ Show more