カテゴリ: 論文誌(論文単位)グループ名: 【E】センサ・マイクロマシン部門発行日: 2014/02/01タイトル(英語): A Long Bar Type Silicon Resonator with a High Quality Factor著者名: Nguyen Van Toan (Graduate School of Engineering, Tohoku University/Microsystem Integration Center (μSIC), Tohoku University), Masaya Toda (Graduate School of Engineering, Tohoku University/Microsystem Integration Center (μSIC), Tohoku University), Yusuke 著者名(英語): Nguyen Van Toan (Graduate School of Engineering, Tohoku University/Microsystem Integration Center (μSIC), Tohoku University), Masaya Toda (Graduate School of Engineering, Tohoku University/Microsystem Integration Center (μSIC), Tohoku University), Yusuke Kawai (Graduate School of Engineering, Tohoku University), Takahito Ono (Graduate School of Engineering, Tohoku University)キーワード: Silicon resonator，quality factor，silicon on insulator，low temperature co-fired ceramic，extensional mode要約(英語): This paper presents a long bar type silicon resonator with a high quality (Q) factor and an evaluation of the hermetic packaged device. This research aims at developing the integration technology of the capacitive silicon resonator on LSI for application of a timing device. The structure of the silicon resonator is defined by deep reactive ion etching of the top Si layer of a silicon on insulator wafer, and then the patterned top Si layer is transferred onto a low temperature co-fired ceramic substrate. Fabricated resonator is hermetically sealed by anodic bonding technique. The resonator is excited in the extensional bulk acoustic mode at a resonant frequency of 9.69 MHz. The Q factor measured for this device is approximately 368,000 at vacuum chamber pressure of 0.01 Pa. Additionally, the dependence of the Q factor on the operating pressure is measured in order to evaluate the vacuum level of the hermetically packaged device.本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.134 No.2 （2014）本誌掲載ページ: 26-31 p原稿種別: 論文／英語電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/134/2/134_26/_article/-char/ja/
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