M393A8G40MB2-CTD - Samsung 64GB DDR4-2666MHZ 2RX4 CL19

Aeonfly Verified independent store

→

Proven DRAM module solution in the global market Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirement s. Specification: Power Memory voltage 1.2 V Memory Buffered memory type Registered (buffered) Memory layout (modules x size) 1 x 64 GB Internal memory 64 GB Component for PC/server Memory form factor RDIMM CAS latency 21 Memory voltage 1.2 V Memory ranking 2 ECC Yes Memory clock speed 2933 MHz Internal memory type DDR4 Features Buffered memory type Registered (buffered) Memory layout (modules x size) 1 x 64 GB Internal memory 64 GB Component for PC/server Memory form factor RDIMM CAS latency 21 Memory voltage 1.2 V Memory ranking 2 ECC Yes Memory clock speed 2933 MHz Internal memory type DDR4 Harmonized System (HS) code 84733020 Logistics data Harmonized System (HS) code 84733020 Other features Harmonized System (HS) code 84733020 Show more