OLYMPUS MPLANAPO 20X REFLECTED LIGHT OBJECTIVE 🔬 Plan apochromat design with superior chromatic correction✨ Strehl ratio ≥95% for exceptional wavefront aberration control📍 0.6 NA / 0.9mm working distance for high-resolution reflected light imaging👌 Flawless optical condition, as-new performance 🔧 Product Description The Olympus MPlanApo 20X objective represents the pinnacle of reflected-light microscopy optics, delivering plan apochromat-level chromatic correction and flat-field imaging across the entire field of view. Engineered for industrial metallography, semiconductor inspection, and materials science applications, this objective achieves a Strehl ratio of 95% or better, ensuring minimal wavefront aberration and maximum resolution at the diffraction limit. The 0.6 numerical aperture provides excellent light-gathering capability and resolving power, while the 0.9mm working distance accommodates a variety of sample geometries. Its RMS threading ensures broad compatibility with legacy and modern Olympus industrial microscope platforms, making it an ideal choice for upgrading existing systems or building high-performance reflected-light configurations. 🔎 Typical Applications Metallographic analysis and grain structure characterization Semiconductor wafer and die inspection Surface topography and defect analysis Failure analysis and quality control in manufacturing Materials science research and phase identification Forensic examination of trace evidence 📊 Key Specifications Specification Details Catalog Number 1-UM925 Manufacturer Olympus Corporation Objective Type Plan Apochromat (MPlanApo) Magnification 20X Numerical Aperture (NA) 0.6 Working Distance 0.9 mm Optical Correction Plan Apochromat (Strehl ratio ≥95%) Illumination Mode Reflected Light (Brightfield/Darkfield) Thread Type RMS (0.800"-36 TPI) Condition Flawless, As New Country of Origin Japan University purchase orders accepted. Please contact us with any questions regarding compatibility or technical specifications.
