Custom 4H-SiC Substrates & Wafers for Power & RF Devices

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4H-SiC (Silicon Carbide) single crystal substrates and wafers are industry-standard materials for next-generation wide-bandgap power electronics. With a bandgap of approximately 3. 26 eV, high thermal conductivity, and an exceptionally high critical electric field, 4H-SiC enables high-voltage, high-power, and high-frequency devices that outperform conventional silicon technologies. Compared with silicon, 4H-SiC offers significantly higher breakdown voltage, lower on-state losses, and superior thermal stability, making it ideal for power devices operating in harsh environments and at elevated temperatures. Its hexagonal polytype structure provides excellent electron mobility along the c-axis, which is why 4H-SiC is the preferred polytype for MOSFETs, Schottky diodes, JFETs, and RF power devices. Our 4H-SiC substrates are produced with strict control of crystal quality, micropipe density, and surface morphology, ensuring reliable epitaxial growth and device fabrication. Precision polishing delivers low surface roughness and high flatness, compatible with advanced epitaxy techniques such as CVD and MBE. Multiple wafer diameters, doping types, and orientations are available to support both academic research and commercial semiconductor manufacturing. Custom specifications, including thickness, resistivity, and surface finish, can be provided upon request. Key Features & Properties Polytype: 4H-SiC Wide bandgap: ~3.26 eV High breakdown electric field Excellent thermal conductivity High electron mobility along c-axis Low defect density and smooth surface finish Suitable for high-temperature and high-power operation Typical Applications Power MOSFETs and Schottky barrier diodes High-voltage and high-efficiency power modules Electric vehicles (EV) and fast-charging systems Renewable energy and smart grid inverters RF and microwave power devices Aerospace and harsh-environment electronics Properties: Conduction Type N-type Poly Type 4H Class P-MOS Diameter(mm) 150±0.25mm Thickness(um) 350um±25um Orientation 4±0.5°off toward Primary Flat Position (degree) ±3° Primary Flat Length(mm) 47.5mm±2.5mm Dopant N-type Nitrogen Resistivity（Ω•cm） 0.015-0.025 MPD(per cm²) ≤0.1/cm2 Surface Process(Si face) CMP, Show more