Single crystal SiO2 (quartz) Size: 3'' diameter x 0.5 mm thickness Orientation: ST-cut Polish: one side polished Surface roughness: < 5 A ( by AFM) Packing: in 1000 class clean room by wafer carrier Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. MTI can provide high quality quartz wafers for both research and industries production at the lowest price Typical Physical Properties Purity Wt % Saw grade: > 99.9 Optical grade: 99.99 Crystal Structure Hex. a= 4.914 Å c = 5.405 Å Growth Method Hydrothermal Hardness 7.0 Moh’s Density 2.684 g/cm3 Melt Point 1610 oC ( phase transition point: 573.1oC) Specific Heat 0.18 cal/gm Thermoelectric Constant 1200 mV/oC @ 300 oC Thermal Conductivity 0.0033 cal/cm/ oC Thermal Expansion (x10-6/ oC) a11: 13.71 a33: 7.48 Index of Refraction 1.544 Q Value Acoustic Velocity, SAW Frequency Constant, BAW Piezoelectric Coupling 1.8 x 106 min. 3160 ( m/sec ) 1661 ( kHz/mm ) K2 (%) BAW: 0.65 SAW: 0.14 Inclusion IEC Grade II choose other quartz substrate Choose substrate from A -Z Wafer Carrier Box Film Coating
