Transistor Module CM200DY-24E 2RG200B

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const inventoryEl = document.querySelector('.product-form__inventory'); const fulfillmentLink = document.getElementById('fulfillment-link'); if (inventoryEl) { const stockText = in ventoryEl.innerHTML.replace('in Stock', 'Available'); inventoryEl.innerHTML = stockText; if (fulfillmentLink) inventoryEl.appendChild(fulfillmentLink); } Specifications Model CM200DY-24E 2RG200B Made In JAPAN Condition Used Other Specifications Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 200Amp. Package: Module insulated 2-element. P/N: CM200DY-24E. Application: High power switching use. AC drive inverters. Servo controls. Collector Current-Max (IC): 200 A Collector-Emitter Voltage-Max: 1200 V Gate-Emitter Voltage-Max: 20 V Number of Elements: 2 Operating Temperature-Max: 150 °C Power Dissipation-Max (Abs): 1500 W Subcategory: Insulated Gate BIP Transistors VCEsat-Max: 3.5 V Insulated Gate Bipolar Transistor: 200A I(C) 1200V V(BR)CES Show more