Ga₂O₃ (Gallium Oxide) substrates/wafers are cutting-edge materials enabling next-generation power semiconductor and deep-ultraviolet (DUV) applications. With an ultra-wide bandgap of approximately 4.9 eV, Ga₂O₃ offers exceptional breakdown voltage, thermal stability, and energy efficiency—outperforming traditional semiconductor materials. Engineered for superior crystal quality and low defect density, these wafers are ideal for developing high-efficiency power devices, solar-blind photodetectors, and advanced RF components. Multiple crystal orientations and customizable specifications are available to meet both research and commercial production requirements. Key Properties: 5mm x 5mm x 0.8mm Orientation: (100) (001), (010), (-201) Dopant Options: Sn (>1×10¹⁸ cm⁻³), Fe (>1×10¹⁰ Ω·cm) Surface Roughness (Ra): 1×10¹⁸ cm⁻³) for power electronics and Fe-doped semi-insulating Ga₂O₃ (>1×10¹⁰ Ω·cm) for RF and photodetector applications. What surface quality and roughness can be achieved? Ga₂O₃ wafers are supplied with epi-ready, single-side or double-side polishing. Typical surface roughness is Ra < 0.5 nm, suitable for epitaxial growth and device fabrication. What wafer sizes and thicknesses are available? Standard research sizes as well as larger-format wafers are available. Thickness, diameter, and edge finishing can be customized based on your process requirements. What applications commonly use Ga₂O₃ substrates? Ultra-high-voltage power devices, Schottky and MOSFET development, solar-blind DUV photodetectors, RF research, and advanced semiconductor R&D. Are Ga₂O₃ wafers suitable for research and commercial development? Yes. Ga₂O₃ substrates are widely used by universities, national laboratories, and industrial R&D teams for both exploratory research and pilot device development.
Related
Related
Related
Related