GaAs (Gallium Arsenide) is a high-performance III–V compound semiconductor widely used in RF and microwave devices, optoelectronics, high-speed electronics, and infrared photonics. With a direct bandgap of approximately 1.42 eV and very high electron mobility, GaAs enables devices that outperform silicon in high-frequency and low-noise applications. Compared with silicon, GaAs offers higher electron mobility, direct bandgap emission, lower noise characteristics, and superior performance at microwave and millimeter-wave frequencies. These properties make GaAs the material of choice for HEMTs, MMICs, laser diodes, photodetectors, and high-speed ICs. GaAs substrates provide excellent lattice matching for homoepitaxial and heteroepitaxial growth of III–V materials such as AlGaAs and InGaAs. Their well-controlled crystal orientation and surface quality are critical for MBE and MOCVD epitaxial growth. Our GaAs wafers are supplied with tight control of orientation, thickness uniformity, surface flatness, and defect density. Optical- and epi-ready polishing is available to support both research laboratories and commercial device manufacturing. Key Features Direct bandgap semiconductor (Eg ≈ 1.42 eV) Very high electron mobility Excellent RF and microwave performance Low noise characteristics Compatible with MBE and MOCVD epitaxy Available in semi-insulating and doped types Typical Applications RF and microwave MMICs HEMT and MESFET devices Laser diodes and LEDs Infrared photodetectors High-speed and low-noise electronics III–V semiconductor research and epitaxy Typical Properties Material: Gallium Arsenide (GaAs) Crystal Structure: Zinc blende Bandgap: ~1.42 eV (direct) Electron Mobility: ~8500 cm²/V·s Orientation: (100), (111) available Conductivity: Semi-insulating, n-type, p-type Frequently Asked Questions — GaAs Substrate / Wafer What is a GaAs substrate used for? + GaAs substrates are widely used for RF, microwave, optoelectronic, and high-speed electronic devices such as MMICs, HEMTs, laser diodes, and photodetectors. How does GaAs compare with silicon? + GaAs offers much higher electron mobility, a direct bandgap, and superior high-frequency performance compared with silicon, making it ideal for RF and optoelectronic applications. Is GaAs suitable for epitaxial growth? + Yes. GaAs wafers are commonly used for MBE and MOCVD growth of III–V materials such as AlGaAs and InGaAs. What types of GaAs wafers are available? + We offer semi-insulating, n-type, and p-type GaAs wafers with multiple orientations, sizes, and surface finishes. Do you support custom sizes and specifications? + Yes. Custom wafer diameters, thicknesses, orientations, and polishing specifications are available upon request. .dr-faq { max-width: 900px; margin: 60px auto; } .dr-faq__title { font-size: 24px; font-weight: 600; margin-bottom: 28px; } .dr-faq__item { border: 1px solid #e6e6e6; border-radius: 14px; margin-bottom: 14px; background: #ffffff; overflow: hidden; } .dr-faq__question { width: 100%; background: #ffffff; border: none; padding: 18px 22px; font-size: 16px; font-weight: 500; display: flex; justify-content: space-between; align-items: center; cursor: pointer; text-align: left; } .dr-faq__question:hover { background: #f7f7f7; } .dr-faq__icon { font-size: 22px; line-height: 1; transition: transform 0.25s ease; } .dr-faq__item.active .dr-faq__icon { transform: rotate(45deg); /* + → × */ } .dr-faq__answer { display: none; padding: 0 22px 20px; font-size: 15px; line-height: 1.6; color: #555; }
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