GaN (Gallium Nitride) is a wide-bandgap III–V semiconductor material widely used in power electronics, RF and microwave devices, LEDs, laser diodes, and advanced optoelectronic systems. With a wide bandgap of approximately 3.4 eV, GaN enables devices with high breakdown voltage, high switching speed, and excellent thermal stability. Compared with silicon and GaAs, GaN offers much higher critical electric field, higher power density, and superior high-frequency performance. These advantages make GaN the material of choice for HEMTs, RF power amplifiers, fast chargers, EV power modules, and high-brightness optoelectronic devices. Native GaN substrates provide excellent lattice matching for homoepitaxial GaN growth, resulting in significantly lower dislocation density compared with heteroepitaxial GaN grown on sapphire or silicon. This leads to improved device efficiency, reliability, and lifetime. Our GaN wafers are supplied with strict control of crystal orientation, surface flatness, thickness uniformity, and defect density. Epi-ready polishing is available for MOCVD, MBE, and HVPE epitaxial growth, supporting both research and commercial manufacturing. Key Features Wide bandgap semiconductor (Eg ≈ 3.4 eV) Very high breakdown electric field High electron mobility and saturation velocity Excellent thermal and chemical stability Low dislocation density (native GaN) Optimized for homoepitaxial growth Typical Applications Power electronics and vertical GaN devices RF and microwave HEMTs High-efficiency power amplifiers Blue and UV laser diodes High-brightness LEDs Advanced optoelectronic and photonic devices Typical Properties Material: Gallium Nitride (GaN) Crystal Structure: Wurtzite Bandgap: ~3.4 eV Orientation: (0001), (10-10), (11-20) Conductivity: Undoped, n-type Surface: Epi-ready, single-side or double-side polished Frequently Asked Questions — GaN Substrate / Wafer What is a GaN substrate used for? + GaN substrates are used for power electronics, RF and microwave devices, LEDs, laser diodes, and advanced optoelectronic systems where high power, high frequency, and high efficiency are required. How does GaN compare with silicon and GaAs? + Compared with silicon, GaN offers much higher breakdown voltage and power density. Compared with GaAs, GaN provides superior high-power and high-temperature performance. Why use native GaN substrates? + Native GaN substrates enable homoepitaxial growth with significantly lower dislocation density than GaN-on-sapphire or GaN-on-silicon, resulting in higher device reliability and performance. Are GaN wafers suitable for epitaxial growth? + Yes. Our GaN wafers are epi-ready and compatible with MOCVD, MBE, and HVPE epitaxial growth techniques. Do you offer custom sizes and specifications? + Yes. Custom wafer sizes, orientations, thicknesses, and surface finishes are available upon request. .dr-faq { max-width: 900px; margin: 60px auto; } .dr-faq__title { font-size: 24px; font-weight: 600; margin-bottom: 28px; } .dr-faq__item { border: 1px solid #e6e6e6; border-radius: 14px; margin-bottom: 14px; background: #ffffff; overflow: hidden; } .dr-faq__question { width: 100%; background: #ffffff; border: none; padding: 18px 22px; font-size: 16px; font-weight: 500; display: flex; justify-content: space-between; align-items: center; cursor: pointer; text-align: left; } .dr-faq__question:hover { background: #f7f7f7; } .dr-faq__icon { font-size: 22px; line-height: 1; transition: transform 0.25s ease; } .dr-faq__item.active .dr-faq__icon { transform: rotate(45deg); /* + → × */ } .dr-faq__answer { display: none; padding: 0 22px 20px; font-size: 15px; line-height: 1.6; color: #555; }
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